BSS139H6327XTSA1 Infineon Technologies MOSFET - 商品詳細情報
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BSS139H6327XTSA1
BSS139H6327XTSA1
N-Channel 250 V 100mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
HTSN : 8541290095
Search Alternative Products
N-Channel 250 V 100mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
HTSN : 8541290095
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223011906707 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BSS139H6327XTSA1
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- SIPMOS(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-236-3|SC-59|SOT-23-3
- Drain to Source voltage
- 250V
- Continuous drain current
- 100mA
- Drive Voltage (Max Rds On, Min Rds On)
- 0|10V
- Drain to Source on-state resistance
- 14Ohm
- Vgs(th)
- 1 V
- Gate Charge (Qg)
- 3.5nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 76pF
- Power consumption
- 360mW
- Operating temperature range
- -55 to 150C
- Other names
- BSS139 H6327TR-ND | BSS139H6327 | BSS139H6327XTSA1TR | BSS139 H6327CT-ND | BSS139 H6327-ND | SP000702610 | BSS139H6327XTSA1CT | BSS139H6327XTSA1DKR | BSS139 H6327CT | BSS139 H6327DKR | BSS139 H6327 | BSS139 H6327DKR-ND
- Type
- Small Signal
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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