BSC900N20NS3GATMA1 Infineon Technologies MOSFET - 商品詳細情報

BSC900N20NS3GATMA1

Infineon Technologies

MOSFET

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BSC900N20NS3GATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Product Overview

Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R

Lifecycle Status : Active

ECCN : EAR99

HTSN : 8541290095

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Product Overview

Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R

Lifecycle Status : Active

ECCN : EAR99

HTSN : 8541290095

Product Information

Data sheet
3D CAD情報
- SamacSys
Footprint/Symbol/3D CAD Information
PCN/PDN(EOL)

Specifications

Manufacturer name: Infineon Technologies

Product name: BSC900N20NS3GATMA1

Product classification: MOSFET

Lifecycle Status: Active

RoHS: RoHS

Series name: OptiMOS(TM)

Field-effect transistor type: N-CH

Technology System: MOSFET(Metal Oxide)

Package: 8-PowerTDFN

Drain to Source voltage: 200V

Continuous drain current: 15.2A

Drive Voltage (Max Rds On, Min Rds On): 10V

Drain to Source on-state resistance: 90mOhm

Vgs(th): 4 V

Gate Charge (Qg): 11.6nC

Vgs (Max): 20V

Input Capacitance (Ciss): 920pF

Power consumption: 62.5W

Operating temperature range: -55 to 150C

Other names: BSC900N20NS3GATMA1TR | BSC900N20NS3GTR | BSC900N20NS3GTR-ND | BSC900N20NS3GCT-ND | BSC900N20NS3GCT | BSC900N20NS3GATMA1CT | BSC900N20NS3 G | SP000781780 | BSC900N20NS3GATMA1DKR | BSC900N20NS3GDKR | BSC900N20NS3G | BSC900N20NS3GDKR-ND

Type: Power MOSFET

Manufacturer Packaging: Tape & Reel

Manufacturer packaging quantity: 5000

If you find an error in the product information, please let us know here.

Documents

Data Sheet
Datasheet	EN_Infineon Technologies_Datasheet_20230223011933522
Environmental and Reliability Data
Constitution Materials List	MCDS_2013-08-29_08-16-54_MA000847648_PG-TDSON-8-5.pdf
Package Information
Package Dimensions	PG-TDSON-8-5 \| BSC900N20NS3GATMA1
Technical Data
Application Note	EN_Infineon Technologies_Application Note_20201013180040433
Selection/Solution Guide	EN_Infineon Technologies_Selection/Solution Guide_20201013185037349

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