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BSC010NE2LSIATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

BSC010NE2LSIATMA1

Infineon Technologies

MOSFET

BSC010NE2LSIATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • BSC010NE2LSIATMA1

    BSC010NE2LSIATMA1

    Infineon Technologies

    MOSFET

    Infineon Technologies

    MOSFET

    Added to bookmarks.
  • Product Overview

    Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R

    Lifecycle Status : NRND
    ECCN EAR99

    HTSN 8541290095

    Product Overview

    Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R

    Lifecycle Status : NRND
    ECCN EAR99

    HTSN 8541290095

    Product Information

    Related Videos
    Data sheet
    Design/Simulation Data
    Other Documents

    Specifications

    Manufacturer name
    Infineon Technologies
    Product name
    BSC010NE2LSIATMA1
    Product classification
    MOSFET
    Lifecycle Status
    NRND
    RoHS
    RoHS
    Series name
    OptiMOS(TM)
    Field-effect transistor type
    N-CH
    Package
    PG-TDSON-8
    Drain to Source voltage
    25V
    Continuous drain current
    38A/100A
    Drain to Source on-state resistance
    1.05mOhm
    Other names
    BSC010NE2LSIATMA1DKR | BSC010NE2LSIDKR | BSC010NE2LSIATMA1TR | BSC010NE2LSICT-ND | BSC010NE2LSI | BSC010NE2LSIATMA1CT | BSC010NE2LSIDKR-ND | BSC010NE2LSITR-ND | BSC010NE2LSI-ND | SP000854376 | BSC010NE2LSICT
    Type
    Power MOSFET
    Manufacturer Packaging
    Tape & Reel
    Manufacturer packaging quantity
    5000

    If you find an error in the product information, please let us know here.

    Documents