BSZ086P03NS3GATMA1 Infineon Technologies MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BSZ086P03NS3GATMA1
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- OptiMOS(TM)
- Field-effect transistor type
- P-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- 8-PowerTDFN
- Drain to Source voltage
- 30V
- Continuous drain current
- 13.5A/40A
- Drive Voltage (Max Rds On, Min Rds On)
- 6|10V
- Drain to Source on-state resistance
- 8.6mOhm
- Vgs(th)
- 3.1 V
- Gate Charge (Qg)
- 57.5nC
- Vgs (Max)
- 25V
- Input Capacitance (Ciss)
- 4785pF
- Power consumption
- 2.1|69W
- Operating temperature range
- -55 to 150C
- Other names
- BSZ086P03NS3 G-ND | BSZ086P03NS3 GDKR-ND | BSZ086P03NS3G | BSZ086P03NS3 GCT | BSZ086P03NS3 G | SP000473024 | BSZ086P03NS3 GDKR | BSZ086P03NS3GATMA1DKR | BSZ086P03NS3 GTR-ND | BSZ086P03NS3GATMA1TR | BSZ086P03NS3 GCT-ND | BSZ086P03NS3GATMA1CT
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 5000
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