IRF7389TRPBF Infineon Technologies MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IRF7389TRPBF
- Product classification
- MOSFET
- Lifecycle Status
- 量产中
- RoHS
- RoHS
- 系列名
- HEXFET(R)
- FET类型
- N and P-Channel
- 封装
- 8-SOIC(0.154inch|3.9mm)
- 漏源电压
- 30V
- 连续漏极电流
- 7.3A/5.3A
- 源漏开态电阻
- 29mOhm/58mOhm
- Mounting Type
- Surface Mount
- 其它名称
- IRF7389PBFDKR | *IRF7389TRPBF | IRF7389TRPBF-ND | SP001554234 | IRF7389PBFTR | IRF7389TRPBFTR-ND | IRF7389PBFCT
- FET Feature
- Logic Level Gate
- 动作温度
- -55 to 150C
- 包装（供应商）
- 8-SO
- 导通电压 -（施加 Id 时的 Vgs）
- 1V@250uA
- 导通电阻 -（施加 Id、Vgs 时的 Rds）
- 29mOhm@5.8A|10V
- 最大功率
- 2.5W
- 栅极电荷 -（施加 Vgs 时）
- 33nC@10V
- 类型
- Power MOSFET
- 输入电容 -（施加 Vds 时的 Ciss）
- 650pF@25V
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 4000
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