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BSC036NE7NS3GATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

BSC036NE7NS3GATMA1

Infineon Technologies

MOSFET

BSC036NE7NS3GATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
Product Overview

Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Overview

Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents
Data Sheet
Datasheet EN_Infineon Technologies_Datasheet_20230223011942312
Environmental and Reliability Data
Constitution Materials List MCDS_2013-08-29_12-41-58_MA000921414_PG-TDSON-8-7.pdf
Package Information
Package Dimensions PG-TDSON-8-7 | BSC036NE7NS3GATMA1
Technical Data
Application Note EN_Infineon Technologies_Application Note_20201013180122951
Selection/Solution Guide EN_Infineon Technologies_Selection/Solution Guide_20201013185123213

Specifications

Manufacturer name
Infineon Technologies
Product name
BSC036NE7NS3GATMA1
Product classification
MOSFET
Lifecycle Status
Active
RoHS
RoHS
Series name
OptiMOS(TM)
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Package
8-PowerTDFN
Drain to Source voltage
75V
Continuous drain current
100A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
3.6mOhm
Vgs(th)
3.8 V
Gate Charge (Qg)
63.4nC
Vgs (Max)
20V
Input Capacitance (Ciss)
4400pF
Power consumption
2.5|156W
Operating temperature range
-55 to 150C
Other names
BSC036NE7NS3GATMA1TR | BSC036NE7NS3GATMA1DKR | BSC036NE7NS3GATMA1CT | 2156-BSC036NE7NS3GATMA1 | INFINFBSC036NE7NS3GATMA1 | SP000907920
Type
Power MOSFET
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
5000

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