BSC057N08NS3GATMA1 Infineon Technologies MOSFET - 商品詳細情報
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BSC057N08NS3GATMA1
BSC057N08NS3GATMA1
N-Channel 80 V 16A (Ta), 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-5
HTSN : 8541290095
Search Alternative Products
N-Channel 80 V 16A (Ta), 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-5
HTSN : 8541290095
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223011935239 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BSC057N08NS3GATMA1
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- OptiMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- 8-PowerTDFN
- Drain to Source voltage
- 80V
- Continuous drain current
- 16A/100A
- Drive Voltage (Max Rds On, Min Rds On)
- 6|10V
- Drain to Source on-state resistance
- 5.7mOhm
- Vgs(th)
- 3.5 V
- Gate Charge (Qg)
- 56nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 3900pF
- Power consumption
- 2.5|114W
- Operating temperature range
- -55 to 150C
- Other names
- BSC057N08NS3 GCT-ND | BSC057N08NS3 G | BSC057N08NS3GATMA1CT-NDTR-ND | BSC057N08NS3GATMA1TR | SP000447542 | 2156-BSC057N08NS3GATMA1TR | BSC057N08NS3GATMA1DKR | BSC057N08NS3 GDKR-ND | BSC057N08NS3 GCT | BSC057N08NS3GATMA1DKR-NDTR-ND | BSC057N08NS3 GDKR | BSC057N08NS3 GTR-ND | BSC057N08NS3G | BSC057N08NS3GATMA1CT | BSC057N08NS3 G-ND | BSC057N08NS3 GTR
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 5000
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