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BSC057N08NS3GATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

BSC057N08NS3GATMA1

Infineon Technologies

MOSFET

BSC057N08NS3GATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

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BSC057N08NS3GATMA1

BSC057N08NS3GATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
Product Overview

N-Channel 80 V 16A (Ta), 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-5

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Overview

N-Channel 80 V 16A (Ta), 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-5

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Information

Related Videos
Data sheet
Design/Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian
Other Documents
Data Sheet
Datasheet EN_Infineon Technologies_Datasheet_20230223011935239
Design and Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian

Specifications

Manufacturer name
Infineon Technologies
Product name
BSC057N08NS3GATMA1
Product classification
MOSFET
Lifecycle Status
Active
RoHS
RoHS
Series name
OptiMOS(TM)
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Package
8-PowerTDFN
Drain to Source voltage
80V
Continuous drain current
16A/100A
Drive Voltage (Max Rds On, Min Rds On)
6|10V
Drain to Source on-state resistance
5.7mOhm
Vgs(th)
3.5 V
Gate Charge (Qg)
56nC
Vgs (Max)
20V
Input Capacitance (Ciss)
3900pF
Power consumption
2.5|114W
Operating temperature range
-55 to 150C
Other names
BSC057N08NS3 GCT-ND | BSC057N08NS3 G | BSC057N08NS3GATMA1CT-NDTR-ND | BSC057N08NS3GATMA1TR | SP000447542 | 2156-BSC057N08NS3GATMA1TR | BSC057N08NS3GATMA1DKR | BSC057N08NS3 GDKR-ND | BSC057N08NS3 GCT | BSC057N08NS3GATMA1DKR-NDTR-ND | BSC057N08NS3 GDKR | BSC057N08NS3 GTR-ND | BSC057N08NS3G | BSC057N08NS3GATMA1CT | BSC057N08NS3 G-ND | BSC057N08NS3 GTR
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
5000

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