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BSC060N10NS3GATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

BSC060N10NS3GATMA1

Infineon Technologies

MOSFET

BSC060N10NS3GATMA1 Infineon Technologies

The images are for reference only. For the precise specifications, refer to the product specifications.

Added to bookmarks.

BSC060N10NS3GATMA1

BSC060N10NS3GATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Added to bookmarks.
Product Overview

N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1

Lifecycle Status : NRND
ECCN EAR99

HTSN 8541290095

Product Overview

N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1

Lifecycle Status : NRND
ECCN EAR99

HTSN 8541290095

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents
Data Sheet
Datasheet EN_Infineon Technologies_Datasheet_20230223011824662
Environmental and Reliability Data
Constitution Materials List MCDS_2013-08-29_13-02-32_MA001065228_PG-TDSON-8-1.pdf
Package Information
Package Dimensions PG-TDSON-8-1 | BSC060N10NS3GATMA1
Technical Data
Application Note EN_Infineon Technologies_Application Note_20201013180237269
Selection/Solution Guide EN_Infineon Technologies_Selection/Solution Guide_20201013185238511

Specifications

Manufacturer name
Infineon Technologies
Product name
BSC060N10NS3GATMA1
Product classification
MOSFET
Lifecycle Status
NRND
RoHS
RoHS
Field-effect transistor type
N-CH
Package
TDSON
Drain to Source voltage
100V
Continuous drain current
14.9A
Drain to Source on-state resistance
6mOhm
Other names
BSC060N10NS3 G | BSC060N10NS3 GDKR | BSC060N10NS3GATMA1TR | BSC060N10NS3 G-ND | SP000446584 | BSC060N10NS3 GTR | BSC060N10NS3 GTR-ND | BSC060N10NS3GATMA1CT | BSC060N10NS3 GCT-ND | BSC060N10NS3GATMA1CT-NDTR-ND | BSC060N10NS3 GDKR-ND | BSC060N10NS3GATMA1DKR-NDTR-ND | BSC060N10NS3G | BSC060N10NS3GATMA1DKR | BSC060N10NS3 GCT
Type
Power MOSFET
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
5000

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Documents