IPD50N06S409ATMA2 Infineon Technologies MOSFET - 商品詳細情報
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IPD50N06S409ATMA2
IPD50N06S409ATMA2
N-Channel 60 V 50A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11
HTSN : 8541290095
Search Alternative Products
N-Channel 60 V 50A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11
HTSN : 8541290095
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223012020831 |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013175743114 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IPD50N06S409ATMA2
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- Automotive/AEC-Q101/OptiMOS(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-252-3|DPak|SC-63
- Drain to Source voltage
- 60V
- Continuous drain current
- 50A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 9mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 47.1nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 3785pF
- Power consumption
- 71W
- Operating temperature range
- -55 to 175C
- Other names
- 448-IPD50N06S409ATMA2CT | 2156-IPD50N06S409ATMA2 | 448-IPD50N06S409ATMA2DKR | IPD50N06S409ATMA2-ND | SP001028662 | 448-IPD50N06S409ATMA2TR | INFINFIPD50N06S409ATMA2
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 2500
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