IRFU120NPBF Infineon Technologies MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IRFU120NPBF
- Product classification
- MOSFET
- Lifecycle Status
- LTB
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-251-3IPak|TO-251AA
- Drain to Source voltage
- 100V
- Continuous drain current
- 9.4A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 210mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 25nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 330pF
- Power consumption
- 48W
- Operating temperature range
- -55 to 175C
- Other names
- SP001557678 | *IRFU120NPBF
- Type
- Power MOSFET
- Manufacturer Packaging
- Tube
- Manufacturer packaging quantity
- 3000
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