IRFB260NPBF Infineon Technologies MOSFET - 商品詳細情報
Search Alternative Products
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- IRFB260NPBF
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 200V
- Continuous drain current
- 56A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 40mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 220nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 4220pF
- Power consumption
- 380W
- Operating temperature range
- -55 to 175C
- Other names
- SP001551726 | *IRFB260NPBF
- Type
- Power MOSFET
- Manufacturer Packaging
- Tube
- Manufacturer packaging quantity
- 1000
If you find an error in the product information, please let us know here.
Documents
