NTB25P06T4G onsemi MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- onsemi
- Product name
- NTB25P06T4G
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- P-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-3|D2Pak|TO-263AB
- Drain to Source voltage
- 60V
- Continuous drain current
- 27.5A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 82mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 50nC
- Vgs (Max)
- 15V
- Input Capacitance (Ciss)
- 1680pF
- Power consumption
- 120W
- Operating temperature range
- -55 to 175C
- Other names
- NTB25P06T4GOS | NTB25P06T4GOSTR | NTB25P06T4GOSCT | NTB25P06T4GOS-ND | ONSONSNTB25P06T4G | 2156-NTB25P06T4G-OS | NTB25P06T4GOSDKR
- Type
- Power MOSFET
- Manufacturer Packaging
- Bulk
- Manufacturer packaging quantity
- 800
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