MMUN2115LT1G onsemi Bipolar Transistor (BJT) - 商品詳細情報
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MMUN2115LT1G
MMUN2115LT1G
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 400 mW Surface Mount SOT-23-3 (TO-236)
HTSN : 8541210095
Search Alternative Products
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 400 mW Surface Mount SOT-23-3 (TO-236)
HTSN : 8541210095
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- onsemi
- Product name
- MMUN2115LT1G
- Product classification
- Bipolar Transistor (BJT)
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- PNP-Prebias
- Collector current
- 100mA
- DC electricity gain
- 160@5mA@10V
- Collector-emitter voltage
- 50V
- Package
- TO-236-3|SC-59|SOT-23-3
- Other names
- MMUN2115LT1G-ND | ONSONSMMUN2115LT1G | MMUN2115LT1GOSDKR | 2156-MMUN2115LT1G-OS | MMUN2115LT1GOSTR | MMUN2115LT1GOSCT
- Current-Collector (Ic) (maximum)
- 100mA
- Current-Collector cutoff (maximum)
- 500nA
- DC current gain (hFE) (minimum)
- 160@5mA,10V
- Mounting Type
- Surface Mount
- Package (Supplier)
- SOT-23-3(TO-236)
- Power-Maximum
- 400mW
- Resistance-Base (R1)
- 10kOhms
- Type
- PNP
- Vce Saturation (maximum)
- 250mV@300uA,10mA
- Voltage-Collector-emitter breakdown (maximum)
- 50V
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 12000
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