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MMUN2115LT1G  onsemi  Bipolar Transistor (BJT)  -  商品詳細情報

MMUN2115LT1G onsemi

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • MMUN2115LT1G

    MMUN2115LT1G

    onsemi

    Bipolar Transistor (BJT)

    onsemi

    Bipolar Transistor (BJT)

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  • Product Overview

    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 400 mW Surface Mount SOT-23-3 (TO-236)

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541210095

    Product Overview

    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 400 mW Surface Mount SOT-23-3 (TO-236)

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541210095

    Product Information

    Related Videos
    Data sheet
    Design/Simulation Data
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    Other Documents
    Data Sheet
    Datasheet
    Design and Simulation Data
    Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian

    Specifications

    Manufacturer name
    onsemi
    Product name
    MMUN2115LT1G
    Product classification
    Bipolar Transistor (BJT)
    Lifecycle Status
    Active
    RoHS
    RoHS
    Transistor type
    PNP-Prebias
    Collector current
    100mA
    DC electricity gain
    160@5mA@10V
    Collector-emitter voltage
    50V
    Package
    TO-236-3|SC-59|SOT-23-3
    Other names
    MMUN2115LT1G-ND | ONSONSMMUN2115LT1G | MMUN2115LT1GOSDKR | 2156-MMUN2115LT1G-OS | MMUN2115LT1GOSTR | MMUN2115LT1GOSCT
    Current-Collector (Ic) (maximum)
    100mA
    Current-Collector cutoff (maximum)
    500nA
    DC current gain (hFE) (minimum)
    160@5mA,10V
    Mounting Type
    Surface Mount
    Package (Supplier)
    SOT-23-3(TO-236)
    Power-Maximum
    400mW
    Resistance-Base (R1)
    10kOhms
    Type
    PNP
    Vce Saturation (maximum)
    250mV@300uA,10mA
    Voltage-Collector-emitter breakdown (maximum)
    50V
    Manufacturer Packaging
    Tape & Reel
    Manufacturer packaging quantity
    12000

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