DTC114YETL Rohm Pre-Biased Bipolar Transistor - 商品詳細情報
DTC114YETL
DTC114YETL
Trans Digital BJT NPN 100mA 3-Pin EMT T/R
HTSN : 8541210095
Trans Digital BJT NPN 100mA 3-Pin EMT T/R
HTSN : 8541210095
| Datasheet | EN_Rohm_データシート_20161101101043245 |
| Datasheet | EN_Rohm_Datasheet_20210617194539265 |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | EN_Rohm_データシート_20161101101043245 |
| Datasheet | EN_Rohm_Datasheet_20210617194539265 |
| Environmental and Reliability Data | |
| Other Environmental and Reliability Data | Moisture Sensitivity Level |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Rohm
- Product name
- DTC114YETL
- Product classification
- Pre-Biased Bipolar Transistor
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- NPN-Prebias
- Collector-emitter voltage
- 50V
- Collector current
- 100mA
- R1/R2
- 0.213
- Package
- SC-75|SOT-416
- Other names
- DTC114YETLDKR | DTC114YETLCT | DTC114YETL-ND | DTC114YETLTR
- Current-Collector (Ic) (maximum)
- 70mA
- Current-Collector cutoff (maximum)
- 500nA
- DC current gain (hFE) (minimum)
- 68@5mA,5V
- DC electricity gain
- 68@5mA@5V
- Frequency-Transition
- 250MHz
- Mounting Type
- Surface Mount
- Package (Supplier)
- EMT3
- Power-Maximum
- 150mW
- Resistance-Base (R1)
- 10kOhms
- Resistance-Emitter base (R2)
- 47kOhms
- Vce Saturation (maximum)
- 300mV@250uA,5mA
- Voltage-Collector-emitter breakdown (maximum)
- 50V
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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Manufacturers : Rohm
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