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SCT30N120  STMicroelectronics  MOSFET  -  商品詳細情報

SCT30N120 STMicroelectronics

The images are for reference only. For the precise specifications, refer to the product specifications.

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SCT30N120

SCT30N120

STMicroelectronics

MOSFET

STMicroelectronics

MOSFET

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Product Overview

Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube

Lifecycle Status : LTB
ECCN EAR99

HTSN 8541290095

Product Overview

Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube

Lifecycle Status : LTB
ECCN EAR99

HTSN 8541290095

Product Information

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Design and Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian) Download from Ultra Librarian

Specifications

Manufacturer name
STMicroelectronics
Product name
SCT30N120
Product classification
MOSFET
Lifecycle Status
LTB
RoHS
RoHS
Field-effect transistor type
N-CH
Technology System
SiCFET(Silicon Carbide)
Package
HIP247
Drain to Source voltage
1200V
Continuous drain current
40A
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source on-state resistance
100mOhm
Vgs(th)
2.6 V
Gate Charge (Qg)
105nC
Vgs (Max)
+25|-10V
Input Capacitance (Ciss)
1700pF
Power consumption
270W
Operating temperature range
-55 to 200C
Product name
STPOWER SiC MOSFETs
Type
Power MOSFET
Manufacturer packaging quantity
30

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