RN2101,LF(CT Toshiba Pre-Biased Bipolar Transistor - 商品詳細情報
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RN2101,LF(CT
RN2101,LF(CT
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
HTSN : 8541210075
Search Alternative Products
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
HTSN : 8541210075
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
| Data Sheet | |
|---|---|
| Datasheet | |
| Design and Simulation Data | |
| Symbol/Footprint/3D Model(UltraLibrarian) | Download from Ultra Librarian |
Specifications
- Manufacturer name
- Toshiba
- Product name
- RN2101,LF(CT
- Product classification
- Pre-Biased Bipolar Transistor
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- PNP-Prebias
- Package
- SC-75|SOT-416
- Other names
- RN2101
- Current-Collector (Ic) (maximum)
- 100mA
- Current-Collector cutoff (maximum)
- 500nA
- DC current gain (hFE) (minimum)
- 30@10mA,5V
- Frequency-Transition
- 200MHz
- Mounting Type
- Surface Mount
- Package (Supplier)
- SSM
- Power-Maximum
- 100mW
- Resistance-Base (R1)
- 4.7kOhms
- Resistance-Emitter base (R2)
- 4.7kOhms
- Vce Saturation (maximum)
- 300mV@250uA,5mA
- Voltage-Collector-emitter breakdown (maximum)
- 50V
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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