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SI4599DY-T1-GE3  Vishay  MOSFET  -  商品詳細情報

SI4599DY-T1-GE3

Vishay

MOSFET

SI4599DY-T1-GE3 Vishay

The images are for reference only. For the precise specifications, refer to the product specifications.

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  • SI4599DY-T1-GE3

    SI4599DY-T1-GE3

    Vishay

    MOSFET

    Vishay

    MOSFET

    Added to bookmarks.
  • Product Overview

    Trans MOSFET N/P-CH 40V 5.6A/4.7A 8-Pin SOIC N T/R

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290095

    Product Overview

    Trans MOSFET N/P-CH 40V 5.6A/4.7A 8-Pin SOIC N T/R

    Lifecycle Status : Active
    ECCN EAR99

    HTSN 8541290095

    Product Information

    Related Videos
    Data sheet
    Design/Simulation Data
    Other Documents

    Specifications

    Manufacturer name
    Vishay
    Product name
    SI4599DY-T1-GE3
    Product classification
    MOSFET
    Lifecycle Status
    Active
    RoHS
    RoHS
    Series name
    TrenchFET(R)
    Field-effect transistor type
    N and P-Channel
    Package
    8-SOIC(0.154inch|3.9mm)
    Drain to Source voltage
    40V
    Continuous drain current
    6.8A/5.8A
    Mounting Type
    Surface Mount
    Other names
    SI4599DY-T1-GE3CT | SI4599DY-T1-GE3DKR | SI4599DY-T1-GE3TR | SI4599DYT1GE3
    Current - Drain (Id) (25°C)
    6.8|5.8A
    FET Feature
    Logic Level Gate
    Gate Charge - (when applying Vgs)
    20nC@10V
    Input Capacitance - (Ciss when Vds is applied)
    640pF@20V
    On Resistance - (Rds when Id,Vgs is applied)
    35.5mOhm@5A|10V
    On Voltage - (Vgs when Id is applied)
    3V@250uA
    Operating temperature
    -55 to 150C
    Package (Supplier)
    8-SO
    Power-Maximum
    3W|3.1W

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