PBRP113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PBRP113ET,215
- Product classification
- Bipolartransistor (BJT)
- Transistor type
- PNP-Prebias
- Collector current
- 600mA
- DC electricity gain
- 40@50mA@5V|130@300mA@5V|140@600mA@5V
- Collector-emitter voltage
- 40V
- Package
- TO-236-3|SC-59|SOT-23-3
- Current-Collector (Ic) (maximum)
- 600mA
- Current-Collector cutoff (maximum)
- 500nA
- DC current gain (hFE) (minimum)
- 130@300mA,5V
- Mounting Type
- Surface Mount
- Package (Supplier)
- TO-236 AB
- Power-Maximum
- 250mW
- Resistance-Base (R1)
- 1kOhms
- Resistance-Emitter base (R2)
- 1kOhms
- Type
- PNP
- Vce Saturation (maximum)
- 750mV@6mA,600mA
- Voltage-Collector-emitter breakdown (maximum)
- 40V
- Related Products
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