PSMN102-200Y,115 Nexperia MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PSMN102-200Y,115
- Product classification
- MOSFET
- Lifecycle Status
- 量产中
- RoHS
- RoHS
- 系列名
- TrenchMOS(TM)
- FET类型
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- 封装
- SC-100|SOT-669
- 漏源电压
- 200V
- 连续漏极电流
- 21.5A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- 源漏开态电阻
- 102mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 30.7nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 1568pF
- 消耗电力
- 113W
- 动作温度范围
- -55 to 150C
- 其它名称
- 1727-5227-6 | 568-6544-2-ND | 568-6544-1-ND | 1727-5227-2 | PSMN102-200Y T/R-ND | 1727-5227-1 | 5202-PSMN102-200Y,115TR | PSMN102200Y115 | 568-6544-6-ND | PSMN102-200Y,115-ND | 568-6544-6 | PSMN102-200Y T/R | 568-6544-2 | 568-6544-1 | 934061323115
- 类型
- Power MOSFET
- Manufacturer packaging quantity
- 1500
- Related Products
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