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2N7002ET1G  onsemi  MOSFET  -  商品詳細情報

2N7002ET1G

onsemi

MOSFET

2N7002ET1G onsemi

The images are for reference only. For the precise specifications, refer to the product specifications.

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2N7002ET1G

2N7002ET1G

onsemi

MOSFET

onsemi

MOSFET

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Produktübersicht

Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R

ECCN EAR99

HTSN 8541210095

Produktübersicht

Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R

ECCN EAR99

HTSN 8541210095

Product Information

Related Videos
Datenblatt
Design/Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian)(English) Download from Ultra Librarian
Other Documents
数据表
Datasheet(English) EN_onsemi_Datasheet_20250313180816329
Design and Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian)(English) Download from Ultra Librarian

Specifications

Herstellername
onsemi
Produktname
2N7002ET1G
Produkt Klassifikation
MOSFET
RoHS
RoHS
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Package
TO-236-3|SC-59|SOT-23-3
Drain to Source voltage
60V
Continuous drain current
260mA
Drive Voltage (Max Rds On, Min Rds On)
4.5|10V
Drain to Source on-state resistance
2.5Ohm
Vgs(th)
2.5 V
Gate Charge (Qg)
0.81nC
Vgs (Max)
20V
Input Capacitance (Ciss)
26.7pF
Power consumption
300mW
Operating temperature range
-55 to 150C
Other names
2N7002ET1G-ND | 2N7002ET1GOSDKR | 2N7002ET1GOSCT | 2832-2N7002ET1G | 2156-2N7002ET1G | 2N7002ET1GOSTR | ONSONS2N7002ET1G
Type
Small Signal
Herstellerverpackung
Tape & Reel
Hersteller Verpackungsmenge
3000

Wenn die Produktinformationen fehlerhaft sind, weisen Sie hier darauf hin.

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