PBRN113ET,215 Nexperia Bipolartransistor (BJT) - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PBRN113ET,215
- Product classification
- Bipolartransistor (BJT)
- Transistor type
- NPN-Prebias
- Collector current
- 700mA
- DC electricity gain
- 40@50mA@5V|180@300mA@5V|250@600mA@5V|270@800mA@5V
- Collector-emitter voltage
- 40V
- Package
- TO-236-3|SC-59|SOT-23-3
- Gleichstromverstärkung (hFE) (Minimum)
- 180@300mA,5V
- Mounting Type
- Surface Mount
- Paket (Lieferant)
- TO-236 AB
- Power-Maximum
- 250mW
- Spannungs-Kollektor-Emitter-Durchbruch (maximal)
- 40V
- Stromabnehmer (Ic) (maximal)
- 600mA
- Stromabnehmerabschaltung (maximal)
- 500nA
- Type
- NPN
- Vce-Sättigung (maximal)
- 1.15V@8mA,800mA
- Widerstands-Emitter-Basis (R2)
- 1kOhms
- Widerstandsbasis (R1)
- 1kOhms
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