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PBRP113ZT,215  Nexperia  Bipolartransistor (BJT)  -  商品詳細情報

PBRP113ZT,215 Nexperia

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PBRP113ZT,215

PBRP113ZT,215

Nexperia

Bipolartransistor (BJT)

Nexperia

Bipolartransistor (BJT)

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Product Overview

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW Surface Mount TO-236AB

ECCN EAR99

HTSN 8541210095

Product Overview

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW Surface Mount TO-236AB

ECCN EAR99

HTSN 8541210095

Product Information

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Specifications

Manufacturer name
Nexperia
Product name
PBRP113ZT,215
Product classification
Bipolartransistor (BJT)
Transistor type
PNP-Prebias
Collector current
600mA
DC electricity gain
190@50mA@5V|230@300mA@5V|190@600mA@5V
Collector-emitter voltage
40V
Package
TO-236-3|SC-59|SOT-23-3
Other names
568-7258-6-ND | 568-7258-2-ND | 568-7258-1-ND | 568-7258-1 | 568-7258-2 | 2156-PBRP113ZT,215-1727 | 568-7258-6 | PBRP113ZT,215-ND | PBRP113ZT T/R | PBRP113ZT215 | PBRP113ZT T/R-ND | 1727-5713-2 | 1727-5713-1 | 934058988215 | 1727-5713-6 | 5202-PBRP113ZT,215TR
Current-Collector (Ic) (maximum)
600mA
Current-Collector cutoff (maximum)
500nA
DC current gain (hFE) (minimum)
230@300mA,5V
Mounting Type
Surface Mount
Package (Supplier)
TO-236 AB
Power-Maximum
250mW
Resistance-Base (R1)
1kOhms
Resistance-Emitter base (R2)
10kOhms
Type
PNP
Vce Saturation (maximum)
750mV@6mA,600mA
Voltage-Collector-emitter breakdown (maximum)
40V
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Erwartetes Versanddatum : Unbekannt
  • C1S Part Number

    :

    C1S548200643965

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