BSS138WH6327XTSA1 Infineon Technologies MOSFET - 商品詳細情報
加工依頼
BSS138WH6327XTSA1
BSS138WH6327XTSA1
N-Channel 60 V 280mA (Ta) 500mW (Ta) Surface Mount PG-SOT323
HTSN : 8541210095
加工依頼
N-Channel 60 V 280mA (Ta) 500mW (Ta) Surface Mount PG-SOT323
HTSN : 8541210095
| 符号/足迹/ 3D模型(UltraLibrarian)(English) | Download from Ultra Librarian |
| 数据表 | |
|---|---|
| 规格书(English) | EN_Infineon Technologies_Datasheet_20230223012000037 |
| 环境和可靠性数据 | |
| 构成物质清单(English) | MCDS_2017-09-25_13-14-01_MA001233752_PG-SOT323-3-2 |
| 设计和仿真数据 | |
| 符号/足迹/ 3D模型(UltraLibrarian)(English) | Download from Ultra Librarian |
| 技术文件 | |
| 应用笔记(English) | EN_Infineon Technologies_Application Note_20201013175835270 |
| 选择/解决方案指南(English) | EN_Infineon Technologies_Selection/Solution Guide_20201013184820477 |
规格
- 制造商名称
- Infineon Technologies
- 制品名
- BSS138WH6327XTSA1
- 制品分类
- MOSFET
- 生命周期状态
- Active
- RoHS
- 符合RoHS标准
- Series name
- SIPMOS(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- SC-70|SOT-323
- Drain to Source voltage
- 60V
- Continuous drain current
- 280mA
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5|10V
- Drain to Source on-state resistance
- 3.5Ohm
- Vgs(th)
- 1.4 V
- Gate Charge (Qg)
- 1.5nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 43pF
- Power consumption
- 500mW
- Operating temperature range
- -55 to 150C
- Other names
- SP000924068 | BSS138WH6327XTSA1TR | BSS138WH6327XTSA1DKR | BSS138WH6327XTSA1CT
- Type
- Small Signal
- 原厂包装
- Tape & Reel
- 制造商数量
- 18000
如果产品信息中有错误,请在此处指出。

