F3L150R07W2E3B11BOMA1 Infineon Technologies IGBT Modules - 商品詳細情報
加工依頼
F3L150R07W2E3B11BOMA1
F3L150R07W2E3B11BOMA1
IGBT Module Trench Field Stop Single 650 V 150 A 335 W Chassis Mount Module
HTSN : 8541290095
加工依頼
IGBT Module Trench Field Stop Single 650 V 150 A 335 W Chassis Mount Module
HTSN : 8541290095
| Data Sheet | |
|---|---|
| Datasheet | EN_Infineon Technologies_Datasheet_20230223011947720 |
| Environmental and Reliability Data | |
| Constitution Materials List | MCDS - Easy2-B |
| Technical Data | |
| Application Note | EN_Infineon Technologies_Application Note_20201013175804981 |
| Catalog | Product Brochure Industrial Gate Driver ICs Overview |
| Catalog | Product Brochure Industrial Gate Driver ICs Overview |
规格
- 制造商名称
- Infineon Technologies
- 制品名
- F3L150R07W2E3B11BOMA1
- 制品分类
- IGBT Modules
- 生命周期状态
- Active
- RoHS
- RoHS
- Maximum operating temperature
- 150C
- Minimum operating temperature
- -40C
- Other names
- F3L150R07W2E3_B11 | F3L150R07W2E3_B11-ND | 2156-F3L150R07W2E3B11BOMA1 | INFINFF3L150R07W2E3B11BOMA1 | SP000638568
- Field-effect transistor type
- N
- 制造商数量
- 15
如果产品信息中有错误,请在此处指出。

