Chip One Stop – 电子元器件、半导体的销售网站
Menu
Hong Kong
Change
中文
SELECT YOUR LANGUAGE
美元
SELECT YOUR CURRENCY FOR DISPLAY
关于优惠等级和折扣率

目前的商品价格将适用于以下


・根据顾客的购买情况可以享受优惠和折扣
・关于折扣仅限于从本网站直接下单的订单
・部分产品和阶梯数量不被包含在优惠折扣产品中
・关于优惠等级的详细信息请联系您的销售人员
・不能与其它优惠同时使用

新闻中心

Infineon Releases Revolutionary CoolSiC™ 1200V SiC JFET Family with DirectDrive Technology: Efficiency Levels for Solar Inverters Scale New Dimensions

2012/05/09Infineon Technologies  电源/电力

 

Nuremberg, Germany – May 8, 2012 – Today at the PCIM Europe 2012 trade show,Infineon Technologies (FSE: IFX / OTCQX: IFNNY) introduced the new CoolSiC™1200V SiC JFET family, which strengthens Infineon’s market leadership in the SiC(Silicon Carbide) product segment. The revolutionary new product line takesadvantage of more than a decade of experience in SiC technology development aswell as high quality, high volume production.

 

“Infineon has a strong track record in launching break-through technologies aimed atmarkets requiring highly efficient power management. CoolSiC™ is again arevolutionary, highly innovative technology specifically designed for reaching newlevels of performance in solar inverters,” said Jan-Willem Reynaerts, ProductSegment Head of High Voltage Power Conversion at Infineon Technologies. “WithInfineon’s new SiC JFET technology we enable our customers to further shape thefuture of climate saving solutions.”

 

The new CoolSiC™ 1200V SiC JFETs have dramatically lower switching lossescompared to IGBTs, which allow higher switching frequencies to be used withoutsacrificing overall system efficiency. This enables the use of much smaller passivecomponents, which result in smaller overall solution size, lower weight and reducedsystem cost. Alternatively, a higher output power solution can be realized within thesame inverter housing.

 

In order to ensure that the normally-on JFET technology is safe and easy to use,Infineon has developed a concept which is called Direct Drive Technology. In thisconcept, the JFET is combined with an external Low Voltage MOSFET and adedicated Driver IC which ensures safe system start-up conditions as well as fast andcontrolled switching.

 

The CoolSiC™ JFET features a monolithically integrated body diode that has aswitching performance comparable to an external SiC Schottky barrier diode. Thiscombination offers the utmost in efficiency, reliability, safety and ease of use.

 

Availability and Pricing
Samples of the CoolSiC™ JFET products as well as the Driver ICs are available inthe second quarter of 2012. First OEM ramp-ups are expected in the first half of2013. Pricing for IJW120R100T1 (100mOhm) will be US$ 24.90 (€ 18.44) per piece(1,000 pieces quantity).

 

Further information on Infineon’s new CoolSiC™ 1200V SiC JFET family is availableat www.infineon.com/coolsic

 

Infineon Technologies is presenting the new CoolSiC™ 1200V SiC JFET products atthe PCIM Europe 2012 (May 8-10) in Nuremberg, Germany, in Hall 12 at Booth 404.

 

About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and systemsolutions addressing three central challenges to modern society: energy efficiency,mobility, and security. In the 2011 fiscal year (ending September 30), the companyreported sales of Euro 4 billion with close to 26,000 employees worldwide. Infineon islisted on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on theover-the-counter market OTCQX International Premier (ticker symbol: IFNNY).

 

Further information is available at www.infineon.com
This news release is available online at www.infineon.com/press


企业HP:
http://components-asiapac.arrow.com/en/new_product/4431/

Infineon Technologies新闻发布

相关新闻