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DTA023JUBTL  Rohm  Pre-Biased Bipolar Transistor  -  商品詳細情報

DTA023JUBTL Rohm

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DTA023JUBTL

DTA023JUBTL

Rohm

Pre-Biased Bipolar Transistor

Rohm

Pre-Biased Bipolar Transistor

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Produktübersicht

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3F

Lifecycle Status : Active
ECCN EAR99

HTSN 8541210075

Produktübersicht

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3F

Lifecycle Status : Active
ECCN EAR99

HTSN 8541210075

Product Information

Related Videos
Design/Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian)(English) Download from Ultra Librarian
Other Documents
Datenblatt
Datasheet(English) EN_Rohm_データシート_20161101101043883
Datasheet EN_Rohm_Datasheet_20210617195236048
Environmental and Reliability Data
Other Environmental and Reliability Data Moisture Sensitivity Level
Design and Simulation Data
Symbol/Footprint/3D Model(UltraLibrarian)(English) Download from Ultra Librarian

Specifications

Herstellername
Rohm
Produktname
DTA023JUBTL
Produkt Klassifikation
Pre-Biased Bipolar Transistor
Lifecycle Status
Active
RoHS
RoHS
Transistor type
PNP-Prebias
Collector-emitter voltage
50V
Collector current
100mA
Package
SC-85
Other names
DTA023JUBTLDKR | DTA023JUBTLTR | DTA023JUBTLCT
DC electricity gain
80@5mA|10V
Frequenz-Übergang
250MHz
Gleichstromverstärkung (hFE) (Minimum)
80@5mA,10V
Mounting Type
Surface Mount
Paket (Lieferant)
UMT3F
Power-Maximum
200mW
Rated power
200mW
Series name
PNP Digital transistor (with built-in resistors)
Spannungs-Kollektor-Emitter-Durchbruch (maximal)
50V
Stromabnehmer (Ic) (maximal)
100mA
Vce-Sättigung (maximal)
150mV@500uA|5mA
Widerstands-Emitter-Basis (R2)
47kOhm
Widerstandsbasis (R1)
2.2kOhm
Herstellerverpackung
Tape & Reel
Hersteller Verpackungsmenge
3000

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