Manufacturer name

Toshiba

Product name

TJ30S06M3L(T6L1,NQ

Product classification

MOSFET

Lifecycle Status

Active

RoHS

RoHS

系列名

U-MOSVI

FET类型

P-CH

Technology System

MOSFET(Metal Oxide)

封装

TO-252-3|DPak|SC-63

漏源电压

60V

连续漏极电流

30A

Drive Voltage (Max Rds On, Min Rds On)

6|10V

源漏开态电阻

21.8mOhm

Vgs(th)

3 V

Gate Charge (Qg)

80nC

Vgs (Max)

+10|-20V

Input Capacitance (Ciss)

3950pF

消耗电力

68W

动作温度范围

175C

其它名称

TJ30S06M3L, 2SJ401(Q)

备注

世代：U-MOSVI / ゲート入力電荷量：80nC(typ.) / 入力容量：3950pF(typ.)

Product name

小信号MOS FET 1素子

类型

Power MOSFET

Manufacturer Packaging

Tape & Reel

Manufacturer packaging quantity

2000

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