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IPB110N20N3LFATMA1  Infineon Technologies  MOSFET  -  商品詳細情報

IPB110N20N3LFATMA1

Infineon Technologies

MOSFET

IPB110N20N3LFATMA1 Infineon Technologies

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IPB110N20N3LFATMA1

IPB110N20N3LFATMA1

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

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Product Overview

Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Overview

Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R

Lifecycle Status : Active
ECCN EAR99

HTSN 8541290095

Product Information

Related Videos
Data sheet
Design/Simulation Data
Other Documents

Specifications

Manufacturer name
Infineon Technologies
Product name
IPB110N20N3LFATMA1
Product classification
MOSFET
Lifecycle Status
Active
RoHS
RoHS
Series name
OptiMOS(TM)-3
Field-effect transistor type
N-CH
Technology System
MOSFET(Metal Oxide)
Drain to Source voltage
200V
Continuous drain current
88A
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source on-state resistance
11mOhm
Vgs(th)
4.2 V
Gate Charge (Qg)
76nC
Vgs (Max)
20V
Input Capacitance (Ciss)
650pF
Power consumption
250W
Operating temperature range
-55 to 150C
Other names
SP001503864 | IPB110N20N3LFATMA1DKR | IPB110N20N3LFATMA1TR | IPB110N20N3LFATMA1CT | IPB110N20N3LFATMA1-ND | 2156-IPB110N20N3LFATMA1TR
Manufacturer Packaging
Tape & Reel
Manufacturer packaging quantity
1000

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