BAS4006WH6327XTSA1 Infineon Technologies Schottky Barrier Diode - 商品詳細情報
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BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
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Product Overview
Diode Array 1 Pair Common Anode 40 V 120mA (DC) Surface Mount SC-70, SOT-323
Lifecycle Status : 量产中
ECCN
: EAR99
HTSN : 8541100070
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Product Overview
Diode Array 1 Pair Common Anode 40 V 120mA (DC) Surface Mount SC-70, SOT-323
Lifecycle Status : 量产中
ECCN
: EAR99
HTSN : 8541100070
Data sheet
Design/Simulation Data
Other Documents
| 数据表 | |
|---|---|
| Datasheet(English) | |
| 环境和可靠性数据 | |
| 构成物质清单(English) | MCDS_2013-08-29_13-08-28_MA000845632_PG-SOT323-3-1.pdf |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- BAS4006WH6327XTSA1
- Product classification
- Schottky Barrier Diode
- Lifecycle Status
- 量产中
- RoHS
- 符合RoHS标准
- Average rectified current
- 0.12A
- Package
- SC-70|SOT-323
- Other names
- BAS 40-06W H6327 | BAS 40-06W H6327-ND | BAS4006WH6327XTSA1TR-ND | 448-BAS4006WH6327XTSA1DKR | BAS4006WH6327XTSA1TR | 448-BAS4006WH6327XTSA1CT | 2156-BAS4006WH6327XTSA1 | SP000749764 | 448-BAS4006WH6327XTSA1TR | IFEINFBAS4006WH6327XTSA1
- Current - Average Rectified Io per Diode
- 120mA(DC)
- Current - Reverse Leakage with Vr Applied
- 1uA@30V
- Diode Configuration
- 1Pair Common Anode
- Diode type
- Schottky
- Mounting Type
- Surface Mount
- Operating temperature range
- 150 C (Max)
- Package (Supplier)
- PG-SOT323-3
- Reverse recovery time
- 100ps
- Spannung – DC Reverse Vr Max
- 40V
- Spannung – Vorwärts (Vf) Max
- 1V@40mA
- Speed
- Small Signal =< 200mA(Io)|Any Speed
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
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