PDTD113ET,215 Nexperia Bipolar Transistor (BJT) - 商品詳細情報
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Specifications
- Manufacturer name
- Nexperia
- Product name
- PDTD113ET,215
- Product classification
- Bipolar Transistor (BJT)
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- NPN-Prebias
- Package
- TO-236-3|SC-59|SOT-23-3
- Other names
- 1727-2150-2 | 568-11969-6 | 1727-2150-1 | 568-12311-2-ND | 934058975215 | 1727-2150-6 | 568-11969-6-ND | PDTD113ET,215-ND | 568-11969-1 | 5202-PDTD113ET,215TR | 568-12311-1-ND | PDTD113ET T/R-ND | 568-12311-6 | 568-12311-2 | 568-12311-1 | 2156-PDTD113ET,215 | 568-11949-2-ND | 568-12311-6-ND | 568-11969-1-ND | PDTD113ET T/R
- Gleichstromverstärkung (hFE) (Minimum)
- 33@50mA,5V
- Mounting Type
- Surface Mount
- Paket (Lieferant)
- TO-236 AB
- Power-Maximum
- 250mW
- Spannungs-Kollektor-Emitter-Durchbruch (maximal)
- 50V
- Stromabnehmer (Ic) (maximal)
- 500mA
- Stromabnehmerabschaltung (maximal)
- 500nA
- Vce-Sättigung (maximal)
- 300mV@2.5mA,50mA
- Widerstands-Emitter-Basis (R2)
- 1kOhms
- Widerstandsbasis (R1)
- 1kOhms
- Manufacturer Packaging
- Tape & Reel
- Manufacturer packaging quantity
- 3000
- Related Products
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