PSMN3R3-80ES,127 Nexperia MOSFET - 商品詳細情報
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PSMN3R3-80ES,127
PSMN3R3-80ES,127
HTSN : 8541290080
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| Datenblatt | |
|---|---|
| Datasheet(English) | EN_Nexperia B.V._Datasheet_20150128065712513 |
Specifications
- Herstellername
- Nexperia
- Produktname
- PSMN3R3-80ES,127
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-262-3|I2Pak|TO-262AA
- Drain to Source voltage
- 80V
- Continuous drain current
- 120A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 3.3mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 139nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 9961pF
- Power consumption
- 338W
- Operating temperature range
- -55 to 175C
- Zusammenhängende Produkte
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