SI4599DY-T1-GE3 Vishay MOSFET - 商品詳細情報
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Specifications
- Manufacturer name
- Vishay
- Product name
- SI4599DY-T1-GE3
- Product classification
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Series name
- TrenchFET(R)
- Field-effect transistor type
- N and P-Channel
- Package
- 8-SOIC(0.154inch|3.9mm)
- Drain to Source voltage
- 40V
- Continuous drain current
- 6.8A/5.8A
- Mounting Type
- Surface Mount
- Other names
- SI4599DY-T1-GE3CT | SI4599DY-T1-GE3DKR | SI4599DY-T1-GE3TR | SI4599DYT1GE3
- Current - Drain (Id) (25°C)
- 6.8|5.8A
- FET Feature
- Logic Level Gate
- Gate Charge - (when applying Vgs)
- 20nC@10V
- Input Capacitance - (Ciss when Vds is applied)
- 640pF@20V
- On Resistance - (Rds when Id,Vgs is applied)
- 35.5mOhm@5A|10V
- On Voltage - (Vgs when Id is applied)
- 3V@250uA
- Operating temperature
- -55 to 150C
- Package (Supplier)
- 8-SO
- Power-Maximum
- 3W|3.1W
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