22 Feb, 2017

 

TOKYO—Toshiba Corporation (TOKYO: 6502) has today unveiled the latest addition in its industry-leading line-up of BiCS FLASHTM three-dimensional flash memory with a stacked cell structure*1, a 64-layer device that achieves a 512-gigabit (64-gigabytes) capacity with 3-bit-per-cell (triple-level cell, TLC) technology. The new device will be used in applications that include enterprise and consumer SSD. Sample shipments of the chip started this month, and mass production is scheduled for the second half of this calendar year.

Toshiba continues to refine BiCS FLASHTM, and the next milestone on its development roadmap is the industry’s largest capacity*2, a 1-terabyte product with a 16-die stacked architecture in a single package. Plans call for the start of sample shipments in April 2017.

For the new 512-gigabit device, Toshiba deployed leading-edge 64-layer stacking process to realize a 65% larger capacity per unit chip size than the 48-layer 256-gigabit (32-gigabytes) device, and has increased memory capacity per silicon wafer, reducing the cost per bit.

Toshiba’s Memory business already mass produces 64-layer 256-gigabit (32-gigabytes) devices and will expand BiCS FLASHTM production. It will advance 3D technology to realize increased densities and finer processes in order to meet diversifying market needs.

Note:

[1]   A structure stacking Flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate.

[2]   As of February 22, 2017. Toshiba survey.

* BiCS FLASH is a trademark of Toshiba Corporation.

Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement, but is subject to change without prior notice.

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞http://toshiba.semicon-storage.com/ap-en?mm=cp170222&no=06

 

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