| 2021/12/26 |
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PCN(产品规格变更通知)
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Qualification of new Fab site (RFAB) using qualified Process Technology, Die Revision, and additional BOM option for select devices Current Fab Site Current Fab Site: SFAB Process: HCMOS Wafer Diameter: 150 mm
Additional Fab Site Additional Fab Site: RFAB Process: LBC9 Wafer Diameter: 300 mm
The die was also changed as a result of the process change.
Additionally, there will be a BOM option introduced for these devices: Bond wire diameter (Cu) Current: 0.96 mils Additional: 0.8 mils
Proposed 1st Ship Date: Dec 26, 2021 |