Ideal for industrial / consumer / automotive applications
Next-generation material SiC / GaN MOSFET lineup
The application specifications change according to market needs, and the requirements for MOSFETs required for each system also change.
Please choose from Infineon’s wide product lineup, such as replacement of the MOSFET currently used in EOL products and replacement of MOSFETs suitable for the latest applications.
CoolMOS™ (< 400W) Super Junction MOSFET for Consumer Applications
Industrial/Automotive CoolMOS™ (>250W) Super Junction MOSFET
CoolMOS™ SJ MOSFET supports low power SMPS applications such as smartphone / tablet chargers, notebook PC adapters, LED lighting, audio and TV power supplies.
For servers, telecom, PC power supplies, solar power, UPS, and industrial applications, Infineon’s latest CoolMOS™ 7 SJ MOSFET series C7, G7, CFD7, PFD7, S7 and P7 product families have the features you need. Choose CoolMOS™ for highest efficiency and highest cost performance.
SiC MOSFET
Infineon’s CoolSiC™ semiconductor solutions are the next critical step towards an energy smart world.
Silicon carbide (SiC) has a wide band gap of 3 eV (eV) and a much higher thermal conductivity when compared to silicon. SiC-based MOSFETs are ideal for high withstand voltage, high power applications operating at high frequencies. Device parameters such as RDS(ON) change less with temperature when compared to silicon, making it possible to design with a small design margin and improve performance. With a proven, high-quality mass production system, Infineon’s CoolSiC™ solutions combine innovative technology with benchmark reliability.
GaN has significantly higher electron mobility with a much higher bandgap (3.4 eV) than SiC.
The breakdown electric field strength is 10 times that of silicon (Si), and twice the electron mobility.
The output charge and gate charge important in high frequency operation are 1/10 that of Si, and the reverse recovery charge is almost zero. GaN is the technology of choice for modern resonant topologies that enable new approaches such as new topologies and current modulation.
Infineon’s GaN solutions are based on the enhancement mode (e-mode) concept, the most robust and high-performance concept on the market for fast turn-on and turn-off. CoolGaN™ Gallium Nitride products focus on high performance and robustness, providing significant added value to a wide range of systems for a variety of applications including servers, telecom, wireless charging, adapters, chargers and audio.
CoolGaN™ switches are also easy to use and simple to design with Infineon’s dedicated GaN EiceDRIVER™ gate driver ICs.
