IRL100HS121 Infineon Technologies MOSFET - 商品詳細情報

IRL100HS121

Infineon Technologies

MOSFET

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IRL100HS121

Infineon Technologies

MOSFET

Infineon Technologies

MOSFET

Produktübersicht

N-Channel 100 V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2) (DFN2020)

Lifecycle Status : 量产中

ECCN : EAR99

HTSN : 8541290095

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Produktübersicht

N-Channel 100 V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2) (DFN2020)

Lifecycle Status : 量产中

ECCN : EAR99

HTSN : 8541290095

Product Information

Datenblatt
3D CAD情報
- SamacSys
- UltraLibrarian
Footprint/Symbol/3D CAD Information
PCN/PDN(EOL)

Specifications

Herstellername: Infineon Technologies

Produktname: IRL100HS121

Produkt Klassifikation: MOSFET

Lifecycle Status: 量产中

RoHS: RoHS

FET类型: N-CH

Technology System: MOSFET(Metal Oxide)

封装: 6-VDFN

漏源电压: 100V

连续漏极电流: 11A

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

源漏开态电阻: 42mOhm

Vgs(th): 2.3 V

Gate Charge (Qg): 5.6nC

Vgs (Max): 20V

Input Capacitance (Ciss): 440pF

消耗电力: 11.5W

动作温度范围: -55 to 175C

其它名称: SP001592836 | IRL100HS121TR | IRL100HS121DKR | IRL100HS121CT | IRL100HS121-ND

Herstellerverpackung: Tape & Reel

Hersteller Verpackungsmenge: 4000

Wenn die Produktinformationen fehlerhaft sind, weisen Sie hier darauf hin.

Documents

Datenblatt
规格书(English)	EN_Infineon Technologies_Datasheet_20230223012440978
设计和仿真数据
Symbol/Footprint/3D Model(UltraLibrarian)(English)	Download from Ultra Librarian
Technical Data
应用笔记(English)	EN_Infineon Technologies_Application Note_20201013180223505
选择/解决方案指南(English)	EN_Infineon Technologies_Selection/Solution Guide_20201013185223646

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IRL100HS121 Infineon Technologies MOSFET - 商品詳細情報

IRL100HS121

IRL100HS121

Specifications

Documents

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IRL100HS121 Infineon Technologies MOSFET - 商品詳細情報

IRL100HS121

IRL100HS121

Specifications

Documents