IRFB3306PBF Infineon Technologies MOSFET - 商品詳細情報
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Specifications
- Herstellername
- Infineon Technologies
- Produktname
- IRFB3306PBF
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 60V
- Continuous drain current
- 120A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 4.2mOhm
- Vgs(th)
- 4 V
- Gate Charge (Qg)
- 120nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 4520pF
- Power consumption
- 230W
- Operating temperature range
- -55 to 175C
- Other names
- 448-IRFB3306PBF | IRFB3306PBF-ND | SP001556002
- Type
- Power MOSFET
- Herstellerverpackung
- Tube
- Hersteller Verpackungsmenge
- 1000
- Zusammenhängende Produkte
-
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