PMZB200UNEYL Nexperia MOSFET - 商品詳細情報
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Specifications
- Herstellername
- Nexperia
- Produktname
- PMZB200UNEYL
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- Active
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- 3-XFDFN
- Drain to Source voltage
- 30V
- Continuous drain current
- 1.4A
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5|4.5V
- Drain to Source on-state resistance
- 250mOhm
- Vgs(th)
- 0.95V
- Gate Charge (Qg)
- 2.7nC
- Vgs (Max)
- 8V
- Input Capacitance (Ciss)
- 89pF
- Power consumption
- 350mW|6.25W
- Operating temperature range
- -55 to 150C
- Other names
- 1727-2327-1 | 1727-2327-2 | 568-12613-2 | 568-12613-1 | 2156-PMZB200UNEYL | 5202-PMZB200UNEYLTR | 568-12613-6-ND | 1727-2327-6 | 568-12613-6 | 568-12613-1-ND | 568-12613-2-ND | 934068606315
- Herstellerverpackung
- Tape & Reel
- Hersteller Verpackungsmenge
- 10000
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