BSC060N10NS3GATMA1 Infineon Technologies MOSFET - 商品詳細情報
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BSC060N10NS3GATMA1
BSC060N10NS3GATMA1
N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
HTSN : 8541290095
Search Alternative Products
N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
HTSN : 8541290095
| Datenblatt | |
|---|---|
| Datasheet(English) | EN_Infineon Technologies_Datasheet_20230223011824662 |
| Environmental and Reliability Data | |
| Constitution Materials List(English) | MCDS_2013-08-29_13-02-32_MA001065228_PG-TDSON-8-1.pdf |
| Package Information | |
| Package Dimensions(English) | PG-TDSON-8-1 | BSC060N10NS3GATMA1 |
| Technical Data | |
| Application Note(English) | EN_Infineon Technologies_Application Note_20201013180237269 |
| Selection/Solution Guide(English) | EN_Infineon Technologies_Selection/Solution Guide_20201013185238511 |
Specifications
- Herstellername
- Infineon Technologies
- Produktname
- BSC060N10NS3GATMA1
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- NRND
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Package
- TDSON
- Drain to Source voltage
- 100V
- Continuous drain current
- 14.9A
- Drain to Source on-state resistance
- 6mOhm
- Other names
- BSC060N10NS3 G | BSC060N10NS3 GDKR | BSC060N10NS3GATMA1TR | BSC060N10NS3 G-ND | SP000446584 | BSC060N10NS3 GTR | BSC060N10NS3 GTR-ND | BSC060N10NS3GATMA1CT | BSC060N10NS3 GCT-ND | BSC060N10NS3GATMA1CT-NDTR-ND | BSC060N10NS3 GDKR-ND | BSC060N10NS3GATMA1DKR-NDTR-ND | BSC060N10NS3G | BSC060N10NS3GATMA1DKR | BSC060N10NS3 GCT
- Type
- Power MOSFET
- Herstellerverpackung
- Tape & Reel
- Hersteller Verpackungsmenge
- 5000
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