CSD19532KTT Texas Instruments MOSFET - 商品詳細情報
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Specifications
- Herstellername
- Texas Instruments
- Produktname
- CSD19532KTT
- Produkt Klassifikation
- MOSFET
- RoHS
- RoHS
- Series name
- NexFET(TM)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-263-3|D2Pak|TO-263AB
- Drain to Source voltage
- 100V
- Continuous drain current
- 200A
- Drive Voltage (Max Rds On, Min Rds On)
- 6|10V
- Drain to Source on-state resistance
- 5.6mOhm
- Vgs(th)
- 3.2 V
- Gate Charge (Qg)
- 57nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 5060pF
- Power consumption
- 250W
- Operating temperature range
- -55 to 175C
- Other names
- -CSD19532KTT | 296-CSD19532KTTTR | 296-44970-1-ND | 296-44970-2-ND | -321-CSD19532KTTCT | CSD19532KTT-ND | 296-CSD19532KTTCT | 296-44970-6-ND | 296-CSD19532KTTDKR | 296-44970-6 | 296-44970-1 | 296-44970-2
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