2SC6076(TE16L1,NV) Toshiba Bipolartransistor (BJT) - 商品詳細情報
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2SC6076(TE16L1,NV)
2SC6076(TE16L1,NV)
Bipolar (BJT) Transistor NPN 80 V 3 A 150MHz 10 W Surface Mount PW-MOLD
HTSN : 8541290075
Search Alternative Products
Bipolar (BJT) Transistor NPN 80 V 3 A 150MHz 10 W Surface Mount PW-MOLD
HTSN : 8541290075
| Symbol/Footprint/3D Model(UltraLibrarian)(English) | Download from Ultra Librarian |
| Design and Simulation Data | |
|---|---|
| Symbol/Footprint/3D Model(UltraLibrarian)(English) | Download from Ultra Librarian |
Specifications
- Herstellername
- Toshiba
- Produktname
- 2SC6076(TE16L1,NV)
- Produkt Klassifikation
- Bipolartransistor (BJT)
- Lifecycle Status
- Active
- RoHS
- RoHS
- Transistor type
- NPN
- Collector current
- 3A
- Collector-emitter voltage
- 80V
- Package
- New PW-Mold
- Other names
- 2SC6076
- Product name
- 高速スイッチング用パワートランジスタ 1素子
- Hersteller Verpackungsmenge
- 2000
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