IGO60R070D1AUMA1 Infineon Technologies MOSFET - 商品詳細情報
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IGO60R070D1AUMA1
IGO60R070D1AUMA1
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Lifecycle Status : Obsolete
ECCN
: EAR99
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Datenblatt
| Datasheet(English) | Infineon-Datasheet-IGO60R070D1 |
| Datasheet(English) | EN_Infineon Technologies_Datasheet_20201013165259649 |
Design/Simulation Data
Other Documents
| Datenblatt | |
|---|---|
| Datasheet(English) | Infineon-Datasheet-IGO60R070D1 |
| Datasheet(English) | EN_Infineon Technologies_Datasheet_20201013165259649 |
| Technical Data | |
| Application Note(English) | EN_Infineon Technologies_Application Note_20201013175934248 |
| Catalog(English) | Gallium Nitride CoolGaN™ e-mode HEMTs |
| Other File(English) | Gallium Nitride - CoolGaN™ - a new era in power electronics with Gallium Nitride - ETG Journal |
| White Paper(English) | EN_Infineon Technologies_White Paper_20201013185603964 |
| Catalog(English) | Gallium Nitride CoolGaN™ e-mode HEMTs |
Specifications
- Herstellername
- Infineon Technologies
- Produktname
- IGO60R070D1AUMA1
- Produkt Klassifikation
- MOSFET
- Lifecycle Status
- Obsolete
- Series name
- CoolGaN(TM)
- Field-effect transistor type
- N-CH
- Technology System
- GaNFET(Gallium Nitride)
- Drain to Source voltage
- 600V
- Continuous drain current
- 31A
- Vgs(th)
- 1.6 V
- Vgs (Max)
- -10V
- Input Capacitance (Ciss)
- 380pF
- Power consumption
- 125W
- Operating temperature range
- -55 to 150C
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