2SK2967(F) Toshiba MOSFET - 商品詳細情報
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Specifications
- Herstellername
- Toshiba
- Produktname
- 2SK2967(F)
- Produkt Klassifikation
- MOSFET
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-3P-3|SC-65-3
- Drain to Source voltage
- 250V
- Continuous drain current
- 30A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 68mOhm
- Vgs(th)
- 3.5 V
- Gate Charge (Qg)
- 132nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 5400pF
- Power consumption
- 150W
- Operating temperature range
- 150C
- Type
- Power MOSFET
- Herstellerverpackung
- Bulk
- Hersteller Verpackungsmenge
- 50
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